Roll No.
Total No. of Questions : 09
B.Tech.
(ECE/ETE) (Sem.–3)
ANALOG
DEVICES AND CIRCUITS
Subject
Code : BTEC-301 (2011 Batch)
Paper
ID : [A1130]
Time : 3 Hrs.
INSTRUCTION TO CANDIDATES :
1.
SECTION-A is COMPULSORY consisting of TEN questions carrying
TWO
marks each.
2.
SECTION-B contains FIVE questions carrying FIVE marks each and
students
has to attempt any FOUR questions.
3.
SECTION-C contains THREE questions carrying TEN marks each and
students
has to attempt any TWO questions.
SECTION-A
l.
Write briefly :
a)
Draw the high frequency equivalent model of transistor.
b)
Define the term hole in context to semiconductors.
c)
What is meant by term reverse saturation current in a BJT?
d)
What is the criterion for oscillation in oscillators?
e)
Draw the circuits of CB, CE and CC configurations using npn transistor.
f)
What do you understand by thermal runaway in transistors?
g)
Give the principle of operation of phototransistor.
h)
Compare NMOS and PMOS.
i)
What is meant by the term quiescent operating point?
j)
Why do we express the gain of an amplifier in dB?
SECTION-B
2.
In a fixed bias circuit determine Ib, Ic and Vce
if transistor is of silicon.
The
values of various circuit parameters are: Vcc = 10 V, Rb
= 2.5MΩ,
Rc
= 15 KΩ and Ω =90.
3.
Draw and explain the small signal low frequency model of JFET.
4.
Discuss various classes of power amplifiers. Discuss the biasing criteria for
various classes.
5.
Although zener diode is operated in the reverse breakdown region, but it does
not burn. Discuss
explaining the working of a zener diode.
6.
Describe the components of current in an npn transistor.
SECTION-C
7.
Derive the expressions for gain, input impedance and output impedance
for
a CE amplifier.
8.
Derive conditions for sustained oscillations in a Wein Bridge oscillator.
9.
write short notes on :
a)
Early Effect.
b)
Crossover distortion in power amplifiers.
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