Electronics-I Question Paper of 3rd Semester Electrical(D) Download Previous Years Question Paper 4

S.B. Roll No……

ELECTRONICS-I

3^rd Exam/Elect/5207/May’08

Duration 3 Hrs.

Section –A

1.      Fill in the blanks

a.     Minimum number of diodes required for bridge rectifier is ________

b.     In an insulator there is large __________ gap between valance and conduction bands.

c.      Minority change carriers have opposite ______ from majority carriers.

d.     In a transistor with normal bias, the emitter junction has __________ resistance.

e.      The main disadvantage of a JFET is low _______ product.

f.       JFET is also known as _______ device.

g.     In a CB amplifier, the maximum efficiency could be ___________%

h.     Linear transistor circuits always operate in ___________ region.

i.       As compared to CB amplifier, the CE amplifier has ________ amplification.

j.       The most widely used blas for linear transistor circuits is__________

Section –B

          Note: attempt any five questions.

2.       

a.     What do you mean by ripples? How can the effect of ripples be reduced?

b.     Give brief history of development of electronics

c.      What is an ideal diode? Draw its characteristics?

d.     Discuss the concept of input and output impedance in case of single stage amplifiers.

e.      Explain the conversion of current source to voltage source to voltage source.

f.       Differentiate between BJT and FET.

g.     Explain Zenor diode as voltage regulator.

h.     Differentiate between active and passive components

i.        

Section –C

  Note: Attempt any five questions.

3.       Compare CB, CC & CE transistor configuration in detail.

4.     Discuss the need of multistage amplifiers. Also explain different types of couplings used.

5.     Explain RC coupled amplifier with suitable diagrams and frequency response.

6.     Discuss various types of diodes in detail.

7.     What is a transistor? Draw symbols of transistors. Also explain the mechanism of current flow.    

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Electronics-I Question Paper of 3rd Semester Electrical(D) Download Previous Years Question Paper 3

S.B. Roll No……

ELECTRONICS-I

3^rd Exam/Elect/0252/5207/Dec’11

Duration 3 Hrs.

Section –A

Note: Attempt all Questions

1.      Do as directed

a.     An ideal voltage source is one which has ________ resistance.

b.     The forces holding the silicon atoms together in a crystal are called ________ bonds.

c.      An intrinsic semiconductor at the absolute zero of temperature behaves like an __________

d.     When forward bias is applied to a junction diode, it ________ the potential barrier.

e.      LED stands for ______

f.       The arrow head on the transistor symbol always points  in the direction of _____ flow in the emitter region.

g.     Compared to a CB amplifier the CE amplifier has __________ current amplification.

h.     The potential divider method of biasing is used in amplifier to make the operating points almost independent of _________

i.       A good biasing circuit should stabilize the collector current against the temperature variations.(T/F)

j.       The __________ impedance of a transistor amplifier in CE mode is low.

k.     The overall voltage gain of a cascaded amplifier is equal to the _______ of the gains of individual stages.

l.       The frequency range of transformer coupled amplifier is limited.(T/F)

m.  JFET stands for __________

n.     AC load line of a transistor is ________ than its DC load line.

o.     ___________ is the space between two gates through which majority carrier pass form source to drain when VDS is applied.

Section –B

          Note: Attempt any Six Questions

       i.            Explain the basic concept of voltage source?

     ii.            Explain what a hole is? How do they move in an intrinsic semiconductor.

  iii.            What is “an ideal diode”? draw its VI characteristics.

  iv.            Describe the working of NPN transistor

     v.            Explain the fixed bias circuit.

  vi.            Explain the concept of input and output impedance.

vii.            Define the following terms

a.     Decibel gain

b.     Ban width

viii.            Differentiate between BJT and JFET.

Section –C

Note: Attempt ay three questions

1.     Explain the transformer coupled amplifier and its frequency response

2.     Draw and explain the working of series inductor filter circuit.

3.     Explain the effect of temperature  on intrinsic semiconductor.

4.     Explain the construction, operation, characteristics and applications of MOSFET.

5.     Explain the following

a.     Drift and diffusion current

b.     Voltage gain and frequency response.

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Electronics-I Question Paper of 3rd Semester Electrical(D) Download Previous Years Question Paper 2

S.B. Roll No……

ELECTRONICS-I

3^rd Exam/Elect/5207/Dec’07

Duration 3 Hrs.

Section –A

1.                 Fill in the blanks

a.                 A Germanium atom contains _______ valance electrons.

b.                 In N-type semi conductor, the current conduction is by _________

c.                  Base terminal is used to control the ___________ form collector to emitter.

d.                 JFET has _____________ noise figure.

e.                  Three terminals of JFET are ______

f.                   For an amplifier ________ coupling gives highest gain.

g.                 ___________ transistor configuration ha highest input impedance.

h.                 The base of ancestor is very __________ and ___________ doped

i.                   ____________ configuration has lowest voltage gain

j.                   A FET has _________ input impedence.

Section –B

 Note: Attempt any six questions

2.                  

a.                 Discuss full wave rectifier with diagram.

b.                 Compare silicon and germanium for conductivity.

c.                  Give characteristics and applications of FET.

d.                 Explain the need of biasing for transistor.

e.                  .  what is Zener diode? Explain Zener diode as regulator.

f.                   What is the use of filter circuits? Discuss different types of filters.

g.                 Explain the conversion of voltage source to current source.

h.                 Discuss JFET as an amplifier.

Section –C

3.  Discuss transformer coupled amplifier with suitable diagrams and frequency response.

4.  Discuss single stage and multistage transistor amplifiers.

5. What is diode? Explain different types of diodes with applications.

6.   Discuss energy band structure for insulators, semiconductor and conductor.

7.   Explain constant current source and constant voltage source with their graphical representations.

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Electronics-I Question Paper of 3rd Semester Electrical(D) Download Previous Years Question Paper 1

S.B. Roll No……

ELECTRONICS-I

3^rd Exam/Elect/0264/Dec’05

Duration 3 Hrs.

Section –A

1.     Fill in the blanks

a.     The electrons in the outermost orbit are called ______ electrons.

b.      The capacitance of a reverse blazed PN junction Increases / decreases/ remains unaffected as the reverses blas is increased.

c.      For proper operation of an N-channel JFET, the gate voltage needs to be ___________ with respect to the drain.

d.     An amplifier hat an output of 2 v when an input signal of 40 mv is applied to it , its voltage gain is ________

e.      Holes are ________ carriers in an n-types semi-conductor

f.       DC load line of a transistor is drawn between two points called  _________ point and ____________ point.

g.     The operation of JFET involves a flow of minority carriers / a flow of majority carriers/ recombination.

h.     The turn on voltage of a germanium diode is 3/7/1.0 volt.

i.       In which condition does BJT act like a closed switch a, cut off b, saturation c, active region

j.       In a bipolar transistor, then base collector junction has; a forward bias b, revise bias c zero blas.

Section –B

          Note: Attempt any five questions

2.      

a.     With the help of a diagram, explain the functioning of an emitter bais circuit.

b.     What is transition region or depletion-region capacitance? Explain.

c.      What is a tunnel diode. Draw it symbol and explain its characteristics.

d.       What do you mean by hi-parameters of a transistor? Explain.

e.      Explain the working of an RC coupled amplifier using a circuit diagram.

f.       What is a Zener diode? With the help of a diagram explain is characteristics.

g.     Differentiate between dc and ac load lines.

Section –C

Note: Attempt any three questions.

3.     Draw and explain the common –source drain characteristics of an n- channel FET.

4.     With the help of a circuit diagram, explain the functioning of a bridge rectifier.

5.     What are direct coupled amplifiers? Discuss their limitations and applications.

6.     Write short notes on any two

a.     Transistor data heats

b.     Decibel gain

c.      Ple fitters

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