Tuesday, September 6, 2016
S.B. Roll No……
Duration 3 Hrs.
Note: Attempt all Questions
1. Do as directed
a. An ideal voltage source is one which has ________ resistance.
b. The forces holding the silicon atoms together in a crystal are called ________ bonds.
c. An intrinsic semiconductor at the absolute zero of temperature behaves like an __________
d. When forward bias is applied to a junction diode, it ________ the potential barrier.
e. LED stands for ______
f. The arrow head on the transistor symbol always points in the direction of _____ flow in the emitter region.
g. Compared to a CB amplifier the CE amplifier has __________ current amplification.
h. The potential divider method of biasing is used in amplifier to make the operating points almost independent of _________
i. A good biasing circuit should stabilize the collector current against the temperature variations.(T/F)
j. The __________ impedance of a transistor amplifier in CE mode is low.
k. The overall voltage gain of a cascaded amplifier is equal to the _______ of the gains of individual stages.
l. The frequency range of transformer coupled amplifier is limited.(T/F)
m. JFET stands for __________
n. AC load line of a transistor is ________ than its DC load line.
o. ___________ is the space between two gates through which majority carrier pass form source to drain when VDS is applied.
Note: Attempt any Six Questions
i. Explain the basic concept of voltage source?
ii. Explain what a hole is? How do they move in an intrinsic semiconductor.
iii. What is “an ideal diode”? draw its VI characteristics.
iv. Describe the working of NPN transistor
v. Explain the fixed bias circuit.
vi. Explain the concept of input and output impedance.
vii. Define the following terms
a. Decibel gain
b. Ban width
viii. Differentiate between BJT and JFET.
Note: Attempt ay three questions
1. Explain the transformer coupled amplifier and its frequency response
2. Draw and explain the working of series inductor filter circuit.
3. Explain the effect of temperature on intrinsic semiconductor.
4. Explain the construction, operation, characteristics and applications of MOSFET.
5. Explain the following
a. Drift and diffusion current
b. Voltage gain and frequency response.
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